Journal Title
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Publisher
Springer, Berlin, Heidelberg
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Authors: Erich Kasper
Publish Date: 1987
Volume: , Issue: , Pages: 265-277
Abstract
Silicon based heterostructures offer the potential of monolithic integration of conventional integrated circuits with superlattices A material concept is introduced which overcomes the problem of lattice mismatch between superlattice and silicon substrate by a homogeneous thin incommensurate buffer layer Data about critical thicknesses buffer layer design strain adjustment and band offsets are given for the SiGe/Si system Room temperature mobility enhancement for modulation doped SiGe/Si heterostructures and its device application for a MODFET is described
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