Journal Title
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Publisher
Springer, Berlin, Heidelberg
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Authors: Di Liang Alexander W Fang John E Bowers
Publish Date: 2012
Volume: , Issue: , Pages: 625-663
Abstract
The chapter discusses photonic integration on silicon from the material property and device points of view and reviews the numerous efforts including bandgap engineering Raman scattering monolithic heteroepitaxy and hybrid integration to realize efficient light emission amplification and lasing on silicon The state of the art technologies for highspeed modulation are also discussed in order to unfold a picture of future transmitters on silicon
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