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Title of Journal: Sci China Phys Mech Astron

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Abbravation: Science China Physics, Mechanics and Astronomy

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SP Science China Press

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DOI

10.1016/0360-3016(92)90378-u

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1869-1927

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Fabrication of 150nm AlSubscript048/Subscript

Authors: XiaoFeng Wu HongXia Liu HaiOu Li Qi Li ShiGang Hu ZaiFang Xi Jin Zhao
Publish Date: 2012/11/29
Volume: 55, Issue: 12, Pages: 2389-2391
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Abstract

High performance 150nm gatelength metamorphic Al048In052As/Ga047In053As high electron mobility transistors mHEMTs with very good device performance have been successfully fabricated A Tshaped gate is fabricated by using a combined technique of optical and ebeam photolithography which is beneficial to decreasing parasitic capacitance and parasitic resistance of the gate The ohmic contact resistance R c is as low as 003 Ω·mm when using a novel ohmic contact metal system Ni/Ge/Ti/Au The devices exhibit excellent DC and RF performance A peak extrinsic transconductance of 775 mS/mm and a maximum drain current density of 720 mA/mm are achieved The unity current gain cutoff frequency f T and the maximum oscillation frequency f max are 1884 and 250 GHz respectively

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