High Efficiency Computer Simulation for Au/nZnO/p

Authors: A A ElAmin

Publish Date: 2016/05/31

Volume: 9, Issue: 3, Pages: 385-393

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Abstract

In this paper the Au/nZnO/pSi/Al heterojunction for developing solar cells with high conversion efficiency and low cost were studied The Au/nZnO/pSi/Al HIT heterojunction with intrinsic thinlayer solar cells were analyzed and designed by AFORSHET software The characteristics of such cells with emitter intrinsic layer thickness and interface states density are discussed The simulation results show that the key role of the intrinsic layer inserted between the ZnO and crystalline silicon substrate pSi is to decrease the interface states density If the interface states density is lower than 1010 cm−2V−1 a thinner intrinsic layer is better than a thicker one The increase of the thickness of the emitter will decrease the shortcurrent density and affect the conversion efficiency The effect of Surface Recombination Velocity SRV front and back on the JV characteristics of the Au/nZnO/pSi/Al heterojunction solar cell has been studied with this simulation With the optimized parameters set the Au/nZnO/pSi/Al solar cell reaches a high efficiency η up to 21849 FF 0834 Voc 0666 V Jsc 3939 mA/cm2

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