Authors: R Nédélec R Vianden The ISOLDE Collaboration
Publish Date: 2005/11/11
Volume: 158, Issue: 1-4, Pages: 281-284
Abstract
Group III nitrides and other wide bandgap semiconductors like ZnO are very promising materials for application in optoelectronics However little is known about the recovery of lattice damage caused by ion implantation necessary to achieve lateral structuring We use the PAC technique to study the behaviour of the Rare Earth isotope 172Lu172Yb after implantation After annealing a large fraction of the probes is found on unique lattice sites with axial symmetry and a low damping of the interaction frequency In addition the corresponding electric field gradient is aligned along the 〈0001〉 axis A substitutional incorporation of the Rare Earth on regular metal lattice sites is therefore probable
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