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Title of Journal: Hyperfine Interact

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Abbravation: Hyperfine Interactions

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Springer Netherlands

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DOI

10.1007/bf01455846

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1572-9540

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An Indefect complex as a possible explanation for

Authors: P Kessler K Lorenz S M C Miranda J G Correia K Johnston R Vianden the ISOLDE collaboration
Publish Date: 2010/11/23
Volume: 197, Issue: 1-3, Pages: 187-191
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Abstract

The role of indium in GaN and AlN films is investigated with the method of the perturbed angular correlation PAC Using the PAC probe 111In in addition to indium on substitutional cation sites a large fraction of probes is found in a distinctly different microscopic environment which was attributed to the formation of an indium nitrogenvacancy VN complex The influence of an electron capture induced after effect is ruled out by additional measurements with the PAC probes 111mCd and 117Cd and using GaN with different dopants It is shown that the VN is not bound to substitutional Cd impurities suggesting that the InVN complex formation is a particularity of In in GaN and AlN Finally a preliminary model is presented to explain the temperature behavior of the electric field gradient observed in the InVN complex measured with 111InThis work reports on PAC measurements in InGaN and AlInN using Cd111m and Cd117 probes The results show that a signal previously observed using In111 arises from an Innitrogenvacancy complex and is not influenced by an electronic aftereffect The background experimental method and results are all described well In short the work reported is of high quality and I recommend the manuscript for publication without modification

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