Journal Title
Title of Journal: Electron Mater Lett
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Abbravation: Electronic Materials Letters
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Publisher
The Korean Institute of Metals and Materials
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Authors: Sung Jin Park SeungJong Park Dambi Park Min An MannHo Cho Jonggi Kim Heedo Na Sung hoon Park Hyunchul Sohn
Publish Date: 2012/04/15
Volume: 8, Issue: 2, Pages: 175-178
Abstract
InTe films were deposited by ion beam sputtering deposition IBSD using In and Te targets The crystallization characteristics of the resulting films were investigated by 4point Rs measurement xray diffraction XRD transmission electron microscopy TEM and the Halleffect measurement system As the amount of In was increased in InTe the crystallization temperature increased Xray data for the crystalline structure show that phase separation to In2Te3 and InTe occurred in InTe and In3Te2 samples after annealing at 350°C The value of carrier mobility and concentration decreased in order of In2Te3 In3Te2 and InTe The decreasing value is caused by phase separation and is the unique property of chemical composition
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