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Title of Journal: Pramana J Phys

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Abbravation: Pramana

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Springer-Verlag

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10.1007/s10847-011-0021-8

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0973-7111

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Experimental analysis of current conduction throug

Authors: Sanjeev K Gupta A Azam J Akhtar
Publish Date: 2010/03/11
Volume: 74, Issue: 2, Pages: 325-330
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Abstract

Electrical properties of SiO2 grown on the Siface of the epitaxial 4HSiC substrate by wet thermal oxidation technique have been experimentally investigated in metal oxidesilicon carbide MOSiC structure with varying oxide thicknesses employing PooleFrenkel PF conduction mechanism The quality of SiO2 with increasing thickness in MOSiC structure has been analysed on the basis of variation in multiple oxide traps due to effective PF conduction range Validity of PooleFrenkel conduction is established quantitatively employing electric field and the oxide thickness using forward I–V characteristics across MOSiC structures From PF conduction plot lnJ/E vs E 1/2 it is revealed that PooleFrenkel conduction retains its validation after a fixed electric field range The experimental methodology adopted is useful for the characterization of oxide films grown on 4HSiC substrate

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