Thermoelectric effect of silicon films prepared by

Authors: Qingrun Hou Bingfu Gu Yibao Chen Yuanjin He

Publish Date: 2012/10/02

Volume: 19, Issue: 10, Pages: 957-963

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Abstract

Aluminuminduced crystallized silicon films were prepared on glass substrates by magnetron sputtering Aluminum was added in the silicon films intermittently by the regular pulse sputtering of an aluminum target The amount of aluminum in the silicon films can be controlled by regulating the aluminum sputtering power and the sputtering time of the undoped silicon layer thus the Seebeck coefficient and electrical resistivity of the polycrystalline silicon films can be adjusted It is found that when the sputtering power ratio of aluminum to silicon is 16 both the Seebeck coefficient and the electrical resistivity decrease with the increasing amount of aluminum as expected the Seebeck coefficient and the electrical resistivity at room temperature are 0185–0285 mV/K and 030–24 ω·cm respectively By reducing the sputtering power ratio to 7 however the Seebeck coefficient does not change much though the electrical resistivity still decreases with the amount of aluminum increasing the Seebeck coefficient and electrical resistivity at room temperature are 0219–0263 mV/K and 026–080 ω·cm respectively

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