Characterization of sputtered ZnO films under diff

Authors: Cuiping Li Baohe Yang Lirong Qian Sheng Xu Wei Dai Mingji Li Xiaowei Li Chengyao Gao

Publish Date: 2012/01/04

Volume: 7, Issue: 6, Pages: 431-436

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Abstract

Polycrystalline ZnO films are prepared using radio frequency magnetron sputtering on glass substrates which are sputteretched for different time Both the size of ZnO grains and the rootmeansquare RMS roughness decrease as the sputteretching time of the substrate increases More Zn atoms are bound to O atoms in the films and the defect concentration is decreased with increasing sputteretching time of substrate Meanwhile the crystallinity and caxis orientation are improved at longer sputteretching time of the substrate The Raman peaks at 99 cm−1 438 cm−1 and 589 cm−1 are identified as E2low E2high and E1LO modes respectively and the position of E1LO peak blue shifts at longer sputteretching time The transmittances of the films which are deposited on the substrate and etched for 10 min and 20 min are higher in the visible region than that of the films deposited under longer sputteretching time of 30 min The bandgap increases from 323 eV to 327 eV with the increase of the sputteretching time of substrateThis work has been supported by the National Natural Science Foundation of China No50972105 the National High Technology Research and Development Program of China No2009AA03Z444 and the Key Supporting Plan Program of Tianjin No10ZCKFGX01200

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