Authors: Fei Qu Teng Zhang HongWei Gu QingQuan Qiu FaZhu Ding XingYu Peng HongYan Wang
Publish Date: 2015/01/30
Volume: 34, Issue: 3, Pages: 173-177
Abstract
Aluminumdoped zinc oxide ZnOAl films were deposited by direct current magnetron sputtering in incorporating hydrogen in sputtering gas at room temperature The influences of hydrogen content in sputtering gas on the structural optical and electrical properties of ZnOAl films were systematically investigated It is found that hydrogen incorporated into ZnO lattice forms shallow donors in ZnOAl films and plays an important role in the properties of ZnOAl films The electrical conductivity and infrared IR reflectance are improved due to the increase of electron carrier concentration and the average transmittance decreases which is ascribed to the strong scattering from the hydrogen incorporated and oxygen vacancies in ZnOAl films In this study the resistivity of 55 × 10−4 Ω·cm is obtained the average transmittance of the wavelength in the range of 400–900 nm is almost 86 and the IR reflectance reaches 75 at 2500 nm which is higher than that of reported TCO films The band gap determined by optical absorption is a result of competition between Burstein–Moss effect and manybody perturbation effect However the hydrogen content in sputtering gas is above 10 and the optical band gap shift is independent of hydrogen content in sputtering gas
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