Authors: WeiLi Xie XiaoDong Zhang WenHui Liu Qi Xie GuangWu Wen XiaoXiao Huang JianDong Zhu FeiXiang Ma
Publish Date: 2015/03/24
Volume: 38, Issue: 3, Pages: 206-209
Abstract
SiC nanowires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 °C by gas pressure annealing processing The morphologies and crystal structures were determined by scanning electron microscopy SEM transmission electron microscopy TEM and Xray diffraction XRD The results show that the assynthesized nanowires are βSiC single crystalline with diameter range of 50–100 nm and length of tens of micron by directly annealing at 900 °C The SiC nanowires grow along the 111 direction with highly uniform morphology And the possible growth mechanism of SiC nanowires is proposed The present work provides an efficient strategy for the production of highquality SiC nanowiresThis work was financially supported by the National High Technology Research and Development Program No 2007AA03Z340 the National Natural Science Foundation of China Nos 51202045 51021002 51172050 51102063 51372052 and 50672018 the Fundamental Research Funds for the Central Universities No HIT NSRIF 2013004 and the Key Technology Research and Development Program of Heilongjiang Province No GC12C3053
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