Authors: HyunSuk Kim TaeSeon Hyun HoGi Kim TaeSoon Yun JongChul Lee IlDoo Kim
Publish Date: 2007/05/17
Volume: 18, Issue: 3-4, Pages: 305-309
Abstract
100 epitaxial Ba06Sr04TiO3 BST thin films were grown on Si substrates using a 9 nm thick SrO buffer layer The phase shifter fabricated on BST films grown on a SrO buffered Si substrate showed a larger figure of merit FOM of 247°/dB as a result of improving the phase tuning while retaining an appropriate insertion loss compared to that 153°/dB for the BST/MgO structure This work demonstrates that a thin SrO buffer layer plays an important role in the successful integration of BSTbased microwave tunable devices onto Si wafers
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