Authors: Song Won Ko Tanawadee Dechakupt Clive A Randall Susan TrolierMcKinstry Michael Randall Azizuddin Tajuddin
Publish Date: 2008/10/09
Volume: 24, Issue: 3, Pages: 161-169
Abstract
Metallization layers with thicknesses well below a micron are needed for future generation multilayer ceramic devices such as capacitors and integrated passive components In many cases the limiting thickness for the electrode is governed by dewetting of the metals from the oxide surface Therefore thin stable metallization layers with low electrical resistivities that can survive high processing temperatures are of interest for these applications For this purpose Cu films prepared from 2methoxyethanolbased solutions were developed using adhesion promoters such as Ti Zn and Zr The solutions were spun onto BaTiO3/SiO2/Si or SiO2/Si substrates pyrolyzed and annealed in a reducing ambient The microstructure of films prepared in this way was found to be uniform and continuous at thicknesses as low as 80 nm Cu films modified with 15 mol Zr had electrical resistivities of about 16–17 μΩcm after 500°C annealing and 5–6 μΩcm after annealing at 900°C in a reducing ambient
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