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Title of Journal: J Electroceram

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Abbravation: Journal of Electroceramics

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Springer US

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DOI

10.1007/bf01658471

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1573-8663

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Compositiondependent dielectric properties and en

Authors: Shengchen Chen Xiucai Wang Tongqing Yang Jinfei Wang
Publish Date: 2014/03/01
Volume: 32, Issue: 4, Pages: 307-310
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Abstract

In this work Pb097La002Zr x Sn095−x Ti005O3 PLZST 05  x  09 tetragonal antiferroelectric AFET and orthogonal antiferroelectric AFEO ceramics were successfully fabricated by screen printing process The ceramic materials were in thickfilm form bonded with a small amount of glass The electric field up to 400 kV/cm was presented for antiferroelectric ceramics Besides in order to reduce the energy loss of ceramics the effects of Sn content and temperature on the dielectric properties and energy storage performance of AFE ceramics were investigated With the increase of Sn content the forward threshold electric field E AF and backward threshold field E FA decreased and the energy storage density increased obviously The maximum energy storage density of 56 J/cm3 30 °C and 47 J/cm3 120 °C with corresponding energy efficiency of 67  and 73  were obtained in Pb097La002Zr05Sn045Ti005O3 ceramic which makes this material a promising potential application in capacitors for pulsed power systems

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