Authors: BingQing Zhou MeiFang Zhu FengZhen Liu JinLong Liu YuQin Zhou GuoHua Li Kun Ding
Publish Date: 2008/03/26
Volume: 51, Issue: 4, Pages: 371-377
Abstract
Hydrogenated microcrystalline silicon μcSiH thin films were prepared by highpressure radiofrequency 1356 MHz plasma enhanced chemical vapor deposition rfPECVD with a screened plasma The deposition rate and crystallinity varying with the deposition pressure rf power hydrogen dilution ratio and electrodes distance were systematically studied By optimizing the deposition parameters the device quality μcSiH films have been achieved with a high deposition rate of 78 Å/s at a high pressure The V oc of 560 mV and the FF of 070 have been achieved for a singlejunction μcSiH pin solar cell at a deposition rate of 78 Å/s
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