Authors: RuiNi Liu HeQing Yang RuiGang Zhang HongXing Dong XiaoBo Chen Li Li LiHui Zhang JunHu Ma HaiRong Zheng
Publish Date: 2009/06/01
Volume: 52, Issue: 6, Pages: 1712-1721
Abstract
βGa2O3 conelike nanowires have been insitu grown on the surface of gallium grains and films by heating gallium substrates at 750–1000°C for 2 h in air The controllable synthesis of βGa2O3 nanowires with different diameters and lengths was achieved by adjusting the heating temperature and time The assynthesized products were characterized by means of Xray diffraction scanning electron microscopy and transmission electron microscopy The results showed that the βGa2O3 nanowires are single crystalline with a monoclinic structure and have a controllable diameter and length in the range of 30–100 nm and 05–15 μm respectively A possible mechanism was also proposed to account for the formation of βGa2O3 conelike nanowires Photoluminescence spectra of the βGa2O3 nanowires obtained at different temperatures were measured at room temperature and a strong blue photoluminescence with peaks at 430 and 460 nm and a weak red photoluminescence with peak at 713 nm were observed The blue light emission intensity decreases with increasing the reaction temperature however the red light emission intensity hardly changes The blue and red light emissions originate from the recombination of an electron on an oxygen vacancy with a hole on a galliumoxygen vacancy pair and the nitrogen dopants etc respectively
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