Authors: Dan Xie YongYuan Zang YaFeng Luo TianLing Ren LiTian Liu ZhiMin Dang
Publish Date: 2009/01/14
Volume: 52, Issue: 1, Pages: 10-14
Abstract
BiFeO3/PZT multilayer capacitor was prepared on Pt100/Ti/SiO2/Si100 substrate PZT buffer layer was derived by MOCVD method label PZT1 and sputtering method label PZT2 respectively XRD analysis indicated that high 110 orientation of BFO in the BFO/PZT1 structure was achieved SEM analysis indicated a better microstructure in the BFO/PZT1 structure compared with BFO/PZT2 The remnant polarization of the BFO/PZT1 was 825 μ C/cm2 at an applied voltage of 8 V compared with that of 252 μC/cm2 in the BFO/PZT2 structure The BFO/PZT1 multilayer exhibited little polarization fatigue 15 upon 1×1010 switching cycles at an applied voltage of 4 V The leakage current density was about 2×10−7 A/cm2 at an applied voltage 4 V in the BFO/PZT1 capacitor All the results indicated that PZT can act as an inducing layer to the BFO and the MOCVD derived PZT has more inducing effect to the BFO thin film at room temperature
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