Authors: JongHyeong Kim Sang Youp Synn Joon Hyun Kim
Publish Date: 2010/10/01
Volume: 11, Issue: 5, Pages: 755-761
Abstract
This paper describes the interaction between operating parameters of target wafer surface We use an organometallic C precursor gas in the focused ion beam deposition process Under the beam intensity conditions 30kV the influences of the ontarget beam control parameters such as dwell time beam spacing minimum frame time and scan type were investigated by the deposition tests The analysis was carried out with the variation of dimensions and shapes of the single pattern The operating parameters considered in this research are implemented in the next doublepatterning deposition The test presented how their interaction appeared on the processing results The analysis configured out the FIB induced deposition of single pattern with the variation of operating parameters Additionally the result shows that the sequent beam job influenced the doublepatterning deposition significantly Onbeam target conditions should be optimized for the target complicated shapes and high aspectratios
Keywords: