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Title of Journal: Indian J Phys

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Abbravation: Indian Journal of Physics

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Springer-Verlag

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10.1016/0301-9322(77)90001-5

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0974-9845

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A review on quantum well structures in photonic de

Authors: Meenakshi Dhingra Ajay Shankar B B Tiwari
Publish Date: 2010/10/03
Volume: 84, Issue: 8, Pages: 1031-1037
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Abstract

Quantum well devices feature heterostructures of very thin epitaxial layers of group IIIV and IIVI semiconductor materials Quantum well devices are integrated monolithically with various optoelectronics devices to provide photonic integrated circuits The representative structure could be realized with GaAs wells with GaAlAs barriers for wavelengths around 09 μm and InGaAsP are used for longer wavelengths Together with quantum well superlattice structure is another popular design for InGaAs Avalanche Photo Diode APD Quantum well structures find their applications in improved lasers superlattice for photodiodes modulators and switches Consequences of quantum well theory are available today in terms of quantum wires and quantum dots Upon the application of the normal electric field to quantum well structures exciton pairs becomes more and more confined and the sharp exciton absorption peaks are observed The effect is termed as “Quantum Confined Stark Effect” The electroabsorption effect is approximately 50 times larger in multiple quantum well structures than it is in bulk semiconductors Another electroabsorption effect known as “Franz Keldysh Effect” has been employed in monolithic waveguide detector These effects lead to electroabsorption lasers EAL as well as electroabsorption laser modulators EML

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