Authors: N Tuğluoğlu H Koralay K B Akgül Ş Çavdar
Publish Date: 2015/06/23
Volume: 90, Issue: 1, Pages: 43-48
Abstract
We have identically fabricated 50 dots of Au/nSi/Al Schottky structures and investigated the mean values of diode parameters from currenttovoltage I–V characteristics at 300 K The values of diode parameters are determined from I–V characteristics and Cheung and the modified Norde functions are varied from diode to diode although the Schottky structures are identically fabricated The experimental values of ideality factor n and barrier height ΦB for 50 dots of the Au/nSi/Al Schottky structures have ranged from 1048 to 1695 and from 0708 to 0807 eV respectively The interface state densities N ss are approximately obtained from 2 × 1013 to 2 × 1011 eV−1 cm−2 in the energy range from E c − 045 to E c − 075 eV respectively These findings can be referred to lateral barrier inhomogeneities of Schottky diodes The distributions of all calculated parameters have been fitted by means of Gaussian function The mean n and ΦB values have been found to be 1316 ± 0213 and 0758 ± 0030 eV respectively Furthermore the value of lateral homogenous barrier height for 50 dots of Schottky structures is determined as 0802 eV from the linear relationship between n and ΦB
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