Authors: A Anitha M Arulmozhi
Publish Date: 2016/10/05
Volume: 91, Issue: 3, Pages: 287-292
Abstract
Diamagnetic susceptibility and binding energy of an exciton in a near triangular quantum well with potential profile proportional to z2/3 composed of GaAs/Ga1−x Al x As and ZnO/Zn1−x Mg x O are calculated as a function of the wellwidth and concentration of Al and Mg respectively varying the magnetic field applied along growth direction ie zaxis Diamagnetic susceptibility of light hole exciton and heavy hole exciton shows inverse behaviors in the two materials below 20 nm wellwidth and the binding energy of both excitons increases as the magnetic field increases The results obtained are compared with those of quantum wells with varied potential profiles and the experimental results reported in the literatureThe authors thank the University Grants Commission UGC New Delhi India for the financial support through Major Research Project No F 42836/2013 SR dated 22032013 and the authorities of Jayaraj Annapackiam College for Women Autonomous Periyakulam Theni District Tamilnadu India for the encouragements
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