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Title of Journal: Korean J Chem Eng

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Abbravation: Korean Journal of Chemical Engineering

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Springer US

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DOI

10.1016/0148-9062(96)86898-7

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1975-7220

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Lowtemperature growth of highly conductive and tr

Authors: SeungWoo Seo Sung Ho Won Heeyeop Chae Sung Min Cho
Publish Date: 2012/01/14
Volume: 29, Issue: 4, Pages: 525-528
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Abstract

Aluminumdoped ZnO AZO thin films are grown by ultrasonicmist deposition method for the transparent conducting oxides TCO applications at low temperatures The AZO films can be grown at a temperature as low as 200 °C with zinc acetylacetonate and aluminum acetylacetonate sources The lowest resistivity of grown AZO films is 10×10−3 Ω·cm and the lowest sheet resistance of 1 μm thick films is 10 Ω/□ which is close to that of commercial indium tin oxide ITO or Asahi Utype SnO2 F glass The highest carrier concentration and mobility are 56×1020 cm−3 and 15 cm2/V·sec respectively Optical transmittance of the AZO films is found over 75 for all growth conditions We believe that the properties of grown AZO films in this study are the best among all reported previously elsewhere by solution processes

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