Authors: S S Khludkov I A Prudaev O P Tolbanov
Publish Date: 2014/01/12
Volume: 56, Issue: 9, Pages: 997-1006
Abstract
A review of the literature on the InN physical properties and state of impurities and defects in it based on the data published recently is presented It is demonstrated that by the present time significant progress has been made in synthesis of the material study of its physical properties and device making It is established that InN has a band gap of 07 eV Doping of InN with magnesium makes it possible to obtain layers with ptype conductivity and preset properties The unique InN properties allow it to be considered as a promising material for a number of new devices
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