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Title of Journal: Russ Phys J

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Abbravation: Russian Physics Journal

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Springer US

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DOI

10.1007/978-3-642-18387-4_5

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1573-9228

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Growth Defects in Light Emitting InGaN/GaN Structu

Authors: V N Brudnyi
Publish Date: 2014/07/24
Volume: 57, Issue: 3, Pages: 341-344
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Abstract

Influence of the intrinsic lattice defects and background impurities on the properties of nitride GaN InN and InGaN compounds and parameters of the LED InGaN/GaN/Al 2 O 3 heterostructures with an active region based on multiple InGaN quantum wells is studied It is shown that preferential accumulation of donortype defects in GaN InN and InGaN compounds is connected with the peculiarities of energy position of the charge neutrality level CNL in the band spectra of these compounds Influence of the sapphire substrate on the defect formation in nitride layers the use of profiled sapphire substrate to reduce the dislocation density in an active region of the InGaN/GaN/Al 2 O 3 heterostructure and the use of polar and semipolar planes to reduce the Stark effect are considered

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  2. Gravitational Field of a Charged Particle with a Field Mass in Three-Dimensional Electrodynamics
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  13. Dielectric Permittivity of Polymer Composites with Encapsulated Liquid Crystals in Strong Electric Fields
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