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Title of Journal: Nano Res

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Abbravation: Nano Research

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Tsinghua University Press

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DOI

10.1002/phbl.19870431105

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1998-0000

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A flexible magnetoelectric fieldeffect transistor

Authors: Nguyen Minh Triet Tran Quang Trung Nguyen Thi Dieu Hien Saqib Siddiqui DoIl Kim Jai Chan Lee NaeEung Lee
Publish Date: 2015/09/08
Volume: 8, Issue: 10, Pages: 3421-3429
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Abstract

Flexible magnetoelectric ME materials have been studied for new applications such as memory energy harvesters and magnetic field sensors Herein with the widely studied and progressive advantages of ME phenomena in the multiferroic field we demonstrate a new approach for utilizing flexible ME materials as gate dielectric layers in ME organic fieldeffect transistors MEOFET that can be used for sensing a magnetic field and extracting the ME properties of the gate dielectric itself The magnetoelectric nanohybrid gate dielectric layer comprises sandwiched stacks of magnetostrictive CoFe2O4 nanoparticles and a highly piezoelectric polyvinylidene fluoridecotrifluoroethylene layer While varying the magnetic field applied to the ME gate dielectric the ME effect in the functional gate dielectric modulates the channel conductance of the MEOFET owing to a change in the effective gate field The clear separation of the ME responses in the gate dielectric layer of MEOFET from those of the other parameters was demonstrated using the AC gate biasing method and enabled the extraction of the ME coefficient of ME materials Additionally the device shows high stability after cyclic bending of 10000 cycles at a banding radius of 12 cm The device has significant potential for not only the extraction of the intrinsic characterization of ME materials but also the sensing of a magnetic field in integrated flexible electronic systems

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