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Title of Journal: Nano Res

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Abbravation: Nano Research

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Tsinghua University Press

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DOI

10.1016/0375-9601(85)90740-6

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1998-0000

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Ballistic transport in singlelayer MoSSubscript

Authors: Xin Huang Wei Liu Aihua Zhang Yan Zhang Zhonglin Wang
Publish Date: 2015/12/04
Volume: 9, Issue: 2, Pages: 282-290
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Abstract

Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials straininduced piezocharges can tune the charge transport across the interface or junction which is referred to as the piezotronic effect For devices whose dimension is much smaller than the mean free path of carriers such as a single atomic layer of MoS2 ballistic transport occurs In this study transport in the monolayer MoS2 piezotronic transistor is studied by presenting analytical solutions for twodimensional 2D MoS2 Furthermore a numerical simulation for guiding future 2D piezotronic nanodevice design is presented

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