Phonon crossplane transport and thermal boundary

Authors: H Ali B S Yilbas

Publish Date: 2015/11/04

Volume: 28, Issue: 5, Pages: 1373-1393

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Abstract

Phonon crossplane transport across silicon and diamond thin films pair is considered and thermal boundary resistance across the films pair interface is examined incorporating the cutoff mismatch and diffusive mismatch models In the cutoff mismatch model phonon frequency mismatch for each acoustic branch is incorporated across the interface of the silicon and diamond films pair in line with the dispersion relations of both films The frequencydependent and transient solution of the Boltzmann transport equation is presented and the equilibrium phonon intensity ratios at the silicon and diamond film edges are predicted across the interface for each phonon acoustic branch Temperature disturbance across the edges of the films pair is incorporated to assess the phonon transport characteristics due to cutoff and diffusive mismatch models across the interface The effect of heat source size which is allocated at hightemperature 301 K edge of the silicon film on the phonon transport characteristics at the films pair interface is also investigated It is found that cutoff mismatch model predicts higher values of the thermal boundary resistance across the films pair interface as compared to that of the diffusive mismatch model The ratio of equilibrium phonon intensity due to the cutoff mismatch over the diffusive mismatch models remains 1 at the silicon edge while it becomes 1 at the diamond edge for all acoustic branches

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