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Title of Journal: J Appl Spectrosc

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Abbravation: Journal of Applied Spectroscopy

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Springer US

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DOI

10.1007/s11882-004-0055-8

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1573-8647

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Photoelectric properties of Al/InSubscript2/Sub

Authors: I V Bodnar’ V Yu Rud’ Yu V Rud’ D V Gorbachev
Publish Date: 2008/08/30
Volume: 75, Issue: 3, Pages: 456-459
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Abstract

We used directional solidification of the melt to grow single crystals of the binary compound In2Se3 and then determined the composition of the crystals obtained and their structure From Hall effect measurements we determined the type of conductivity the concentration and the Hall mobility of the free electrons in the single crystals obtained on which we developed photosensitive Al/In2Se3 Schottky barriers for the first time and determined their photoelectric properties We established that the indicated barriers can be used to design broadband optical photoconverters based on In2Se3 single crystals

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  2. Determination of the Mass Absorption Coefficient in Two-Layer Ti/V and V/Ti Thin Film Systems by the X-Ray Fluorescence Method
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  4. Effect of Chemical Reactions of Compounds of an Analyte Element on Characteristic Features of Its Injection into an Electrical Discharge Plasma
  5. Dynamics of polarization switching in single-mode injection semiconductor lasers
  6. Up-Conversion Luminescence in Oxyfluoride Glass-Ceramics with PbF 2 :(Yb 3+ , Eu 3+ , RE 3+ ) (RE = Tm, Ho, OR Er) Nanocrystals
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