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Title of Journal: J of Materi Eng and Perform

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Abbravation: Journal of Materials Engineering and Performance

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Springer US

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1544-1024

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Interfacial Reaction and Shear Strength of SnAgCu/

Authors: Hongyang Jing Yuan Li Lianyong Xu Yongdian Han Guoquan Lu Hao Zhang
Publish Date: 2015/11/24
Volume: 24, Issue: 12, Pages: 4844-4852
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Abstract

As a diffusion barrier layer Ni is widely applied in power electronics packaging especially in thermoelectric devices This paper presents the variation of Ni diffusion barrier layer during aging and failure mechanisms of thermoelectric device joints The thermoelectric joint consists of Sn965Ag30Cu05 SAC305 solder and Bi2Te3based thermoelectric materials such as Bi05Sb15Te3 and Bi18Sb02Se015Te285 during service The result shows that with the increasing aging time Ni layer was constantly consumed by SAC305 and Bi2Te3based thermoelectric materials simultaneously The reaction products are CuNi6Sn5 and NiTe or NiBiTe respectively Besides the shear strength of SAC305/Bi05Sb15Te3 joint or SAC305/Bi18Sb02Se015Te285 joint gets gradually decreased and thermoelectric conversion performance gets worse Meantime the different failure mechanisms are also compared between SAC305/Bi05Sb15Te3 couple joints and SAC305/Bi18Sb02Se015Te285 couple jointsThe authors acknowledge the research funding provided by the National Natural Science Foundation of China Grant No 51175375 Key Project in the Science Technology Pillar Program of Tianjin Grant No 11ZCKFGX03000 Program for New Century Excellent Talents in University NCET110375 and Specialized Research Fund for the Doctoral Program of Higher Education of China 20110032130002


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  10. Facile Electrochemical Method to Improve Surface Features of Pure Copper in Dilute Basic Solutions
  11. Performance Evaluation of a Commercial Polyurethane Coating in Marine Environment
  12. Analysis of Heat Affected Zone in Welded Aluminum Alloys Using Inverse and Direct Modeling
  13. Study of Electrical, Mechanical, and Tribological Properties of CrN x Thin Films as a Function of Sputtering Conditions
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