Authors: Karlheinz Seeger Karl F Hess
Publish Date: 2005/03/15
Volume: 237, Issue: 3, Pages: 252-262
Abstract
Nonlinear microwave optics of semiconductors is influenced by two relaxation times τ m and τɛ which determine energy and momentum relaxation In the range of warm carriers τɛ is assumed to be not dependent and τ m linearly dependent on energy The simple model of band structure of semiconductors and a monoenergetic energy distribution of carriers are assumed The calculation yields the frequency dependence of the nonlinearity coefficient β as observed by Seeger with Morgans experimental arrangement parallel dc and ac electric fields also at high frequencies and low temperatures Furthermore the hf behaviour of frequency multiplication and harmonic mixing are givenFor valuable advice and discussion we express our sincere gratitude to Prof Dr K Baumann For the numerical calculations computer facilities of the Institute for Numerical Mathematics of the TH Wien were used This work is sponsored by the “Forschungsförderungsfonds der gewerblichen Wirtschaft” as well as the “Ludwig BoltzmannGesellschaft Wien”
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