Terahertz Pulse Emission from Nanostructured 311

Authors: R Adomavičius J Adamonis A Bičiūnas A Krotkus A Atrashchenko V Evtikhiev V Ulin M Kaliteevski R Abram

Publish Date: 2012/04/22

Volume: 33, Issue: 6, Pages: 599-604

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Abstract

In the present work azimuthal angle dependences of the terahertz THz pulse emission from lower symmetry 311 planes of porous GaAs samples have been studied GaAs porous layers were prepared by pulsed anodic electrochemical etching of ntype 311 GaAs wafers in mixed acidic fluorideiodide electrolyte It has been discovered that the anodic electrochemical etching of the GaAs sample significantly enhances its terahertz radiation emissivity It was shown theoretically that for this crystallographic plane the contributions of both optical rectification OR and electricfieldinduced optical rectification EFIOR effects are characterized by different azimuthal angle dependences Experimental measurements were compared with the theoretical calculations of the azimuthal angle dependencies it has been shown that both nonlinear optical effects are necessary to take into account when explaining the experimental observations

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