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Journal Title
Title of Journal: J Infrared Milli Terahz Waves
Abbravation: Journal of Infrared, Millimeter, and Terahertz Waves
Publisher
Springer US
DOI
10.1002/j.2164-585x.1969.tb00209.x
ISSN
1866-6906
Indium nitride is a novel narrow band gap semiconductor The material is a potential strong source of terahertz frequency electromagnetic radiation with applications in timedomain terahertz spectroscopy and imaging systems This article reviews recent experimental research on terahertz emission from the binary compound semiconductor indium nitride excited by nearinfrared laser beams or microseconds electrical pulses Advantages of indium nitride as terahertz radiation source material are discussed It is demonstrated that different mechanisms contribute to the emission of terahertz radiation from indium nitride The emission of up to 24 μW of THz radiation power is observed when InN is excited with nearinfrared femtosecond laser pulses at an average power of 1 WFor the work reviewed in the article the authors acknowledge financial support through the National Science Foundation US Air Force Research Laboratory ARLLehigh Cooperative Agreement the Russian Foundation for Basic Research and the Program of the Presidium of the Russian Academy of Sciences Furthermore T V Shubina thanks NA Gippius for many helpful discussions VA Shalygin and AV Andrianov for the THz measurements at electrical pumping