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Title of Journal: Sci China Technol Sci

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Abbravation: Science China Technological Sciences

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Springer Berlin Heidelberg

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1869-1900

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Fabrication and characterization of amorphous ITO/

Authors: Bo He HongZhi Wang YaoGang Li ZhongQuan Ma Jing Xu QingHong Zhang ChunRui Wang HuaiZhong Xing Lei Zhao DunDong Wang
Publish Date: 2013/06/28
Volume: 56, Issue: 8, Pages: 1870-1876
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Abstract

Amorphous indiumtinoxide aITO film was deposited by radiofrequency RF magnetron sputtering at 180°C substrate temperature on the texturized pSi wafer to fabricate aITO/pSi heterojunction solar cell The microstructural optical and electrical properties of the a ITO film were characterized by XRD SEM XPS UVVIS spectrophotometer fourpoint probe and Hall effect measurement respectively The electrical properties of heterojunction were investigated by I–V measurement which reveals that the heterojunction shows strong rectifying behavior under a dark condition The ideality factor and the saturation current density of this diode are 226 and 158×10−4 A cm−2 respectively And the value of I F/I R I F and I R stand for forward and reverse currents respectively at 1 V is found to be as high as 215 For the aITO/pSi heterojunction solar cell the aITO thin film acts not only as an emitter layer but also as an antireflected coating film The conversion efficiency of the fabricated aITO/pSi heterojunction cell is approximately 11 under 100 mW cm−2 illumination AM15 condition And the opencircuit voltage V oc shortcircuit current density J SC filll factor FF are 280 mV 983 mA cm−2 and 399 respectively Because the ITO film deposited at low temperature is amorphous it can effectively reduce the interface states between ITO and pSi The barrier height and internal electric field which is near the surface of pSi can effectively be enhanced Thus we can see the great photovoltaic effect


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