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Title of Journal: Int J Thermophys

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Abbravation: International Journal of Thermophysics

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Springer US

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DOI

10.1002/jso.2930050510

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1572-9567

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Depth Profiling of Electronic Transport Properties

Authors: Rui Tai Chinhua Wang Jingpei Hu Andreas Mandelis
Publish Date: 2014/08/24
Volume: 36, Issue: 5-6, Pages: 967-972
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Abstract

A depth profiling theory for electronic transport properties carrier diffusivity and lifetime in ionimplanted semiconductor wafers using infrared photocarrier radiometry PCR is proposed The ionimplanted inhomogeneous sample was sliced into many virtual sublayers along the depth direction so that the continuously variable electronic properties across the whole thickness can be considered as uniform in each incremental slice A recursion relationship among the slices was obtained and the overall PCR signal was built based on contributions from each slice Experimental lifetime and electronic diffusivity reconstructions of depth profiles at two ion doses 3times 1014 mathrmcm2 text and 3times 1015mathrmcm2 and several implantation energies from 075 MeV to 20 MeV have been demonstratedThis work was supported by a Grant from the National Natural Science Foundation of China Contract No 60877063 Scientific Research Foundation for Returned Scholars Ministry of Education of China and the Project of the Priority Academic Program Development PAPD of Jiangsu Higher Education Institutions

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