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Title of Journal: Sci China Chem

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Abbravation: Science China Chemistry

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SP Science in China Press

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DOI

10.1016/0531-5565(93)90019-a

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1862-2771

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A GaSubscript2/SubscriptO·11AlSubscript2/Su

Authors: Yu Wang Wen Wen Kai Wu
Publish Date: 2010/02/21
Volume: 53, Issue: 2, Pages: 438-444
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Abstract

A Ga2O·11Al2O3 nanonet was synthesized by using Ga2O3 powder as the precursor to generate Ga2O vapor in H2 atmosphere which further reacted with Al2O3 at 730 °C to form Ga2O·11Al2O3 at the interfaces of a porous anodic aluminum oxide AAO template The prepared Ga2O·11Al2O3 nanonet then served as a Ga2Ostablizing reservoir to fabricate single crystal GaN nanowires The residual Ga2O3 powder at the surface of the produced Ga2O·11Al2O3 nanonet and the metallic Ga or Ga2O from the Ga2O·11Al2O3 decomposition reacted with ammonia to yield GaN nanowires at 780 °C The reaction mechanisms were investigated

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