Authors: Vittorio M N Passaro Francesco de Passaro
Publish Date: 2007/01/06
Volume: 38, Issue: 9-11, Pages: 877-
Abstract
An alloptical AND gate based on Raman effect in silicononinsulator technology is proposed Stimulated Raman scattering two photon absorption free carrier dispersion self and cross phase modulation induced by Kerr effect walkoff and pump depletion are included in the complete mathematical model avoiding any a prioriassumption Finally the design criteria to optimize the device performance are presented
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