Authors: Nima E Gorji
Publish Date: 2015/02/07
Volume: 47, Issue: 8, Pages: 2445-2453
Abstract
CdS/CdTe thin films with 21 upmu hbox m thickness were grown using RF magnetron sputtering in two different mixtures of Ar and hbox O 2 The substrate was a commercially available Pilkington glass with TCO deposited The concentration of hbox O 2 was selected to be 0 1 and 5 The crystallographic morphological optical and electrical properties of the asdeposited samples were compared with the ones treated with hbox CdCl 2 and subsequently annealed at high temperature The films morphology and crystallinity were studied by Xray diffraction and scanning electron microscopy Xray diffraction shows a transition of zinc blend cubic phase to hexagonal as the oxygen content increases from 0 to 5 The measurements show the larger band gap and grain sizes for the films with higher oxygen content The band gap and transmission rate of the O 2free and oxygenated devices is different and the grains size is greatly affected by the oxygen contentThe SEM and XRD measurements were performed in Instrumentation Centre and the Optical transmission spectroscopy was performed in Wright one laboratory of the University of Toledo USA We thank Prof Compaan for his permission to access the RF sputtering system in his lab This work was supported by Marco Polo Grant from the department of Electrical Engineering of the University of Bologna Italy Prof Karpov is truly appreciated for his valuable discussions We are grateful to Dr K Dohyoung for his assistance in fabrication and characterization of the samples
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