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Title of Journal: Opt Quant Electron

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Abbravation: Optical and Quantum Electronics

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Publisher

Springer US

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DOI

10.1002/jlac.18470610304

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1572-817X

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Passively Qswitched laser performance of a compos

Authors: ShiXia Li GuiQiu Li ShengZhi Zhao XiaoMei Wang KeJian Yang DeChun Li WenChao Qiao HaiJuan Zhang TianLi Feng HongWei Chu
Publish Date: 2013/12/11
Volume: 46, Issue: 9, Pages: 1179-1186
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Abstract

By using GaAs wafer as the saturable absorber the laserdiode pumped passively Qswitched composite NdYVO 4 laser has been successfully demonstrated For this passively Qswitched operation the average output power obtained is as high as 846 mW at the incident pump power of 531 W while the pulse duration is as short as 145 ns The largest singlepulse energy of 249 upmu J and the highest peak power of 166 W are obtained The GaAs saturable absorber with thickness of 400 upmu m has shown more excellent laser performance comparing with 700 upmu m thick GaAs

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