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Title of Journal: Opt Quant Electron

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Abbravation: Optical and Quantum Electronics

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Springer US

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DOI

10.1016/0167-8809(90)90171-9

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1572-817X

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Highly efficient ARC less InGaP/GaAs DJ solar cell

Authors: Khomdram Jolson Singh Subir Kumar Sarkar
Publish Date: 2011/11/09
Volume: 43, Issue: 1-5, Pages: 1-21
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Abstract

An effective BSF is a key structural element for an efficient solar cell either in a multijunction or in a singlejunction device In this paper two important materials AlGaAs and InAlGaP with their varied thickness ie 005–10 μm both for top BSF and bottom BSF cells are investigated using the computational numerical modeling TCAD tool Silvaco ATLAS It has been found that under the current matching condition with the relatively thinner 30 nm top BSF layer and the thicker 1000 nm bottom BSF layer the cell exhibit an overall enhancement of shortcircuit current density Jsc and open circuit voltage Voc thereby improving the overall efficiency of the cell A wide band gap material In05Al07 Ga0305P is proved to be a better choice for both window and BSF layer by increasing 62 more efficiency than using other widely used Al07 Ga03 As material under the same cell configuration because of its high photo generation rate For this optimized cell structure the maximum Jsc = 1610 mA/cm2 Voc = 2392V and fill factor = 8752 are obtained under AM15G illumination exhibiting a maximum conversion efficiency of 321964 1 sun and 366781 1000 suns This work reports the Influence of different BSF material and structures on the characteristics and efficiency of MultiJunction solar cells The detail photogeneration rates and EQE in this optimized ARC less DJ solar cell structure are also observed The major stages of the modeling are explained and the simulation results are validated with published experimental data to demonstrate the accuracy of our results produced by the model utilizing this technique


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