Authors: Mattia Rossetti Paolo Bardella Ivo Montrosset
Publish Date: 2009/05/16
Volume: 40, Issue: 14-15, Pages: 1129-1134
Abstract
We present the results of a onedimensional 1D numerical model for the simulation of quantum dot QD multisection superluminescent diodes SLD using a rate equation approach A comparison between experimental and simulated P–I characteristics of a single section SLD is provided in order to validate the model parameters Using these parameters we analyzed more complicated structures with nonuniform injection and waveguide cross section The purpose has been to investigate how to increase power at the broadband emission condition equal power emission from ground state and excited state and to tune this condition in a wide range of power We found that applying a non uniform injection in the two sections no improvement in the maximum output power is achieved at the broad bandwidth condition in devices with uniform waveguide On the contrary when a tapered section is introduced the use of two electrodes and nonuniform current injection allows to obtain larger output power and tunability range respect to the case with uniform injection
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