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Title of Journal: Opt Quant Electron

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Abbravation: Optical and Quantum Electronics

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Springer US

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DOI

10.1016/j.bbamcr.2009.01.004

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ISSN

1572-817X

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The photocurrentvoltage characteristic simulated

Authors: Haidong Lu Bin Zhang Fangmin Guo
Publish Date: 2016/02/09
Volume: 48, Issue: 3, Pages: 181-
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Abstract

The resonant tunneling photodiodes based on an AlGaAs/GaAs double barrier structure with an InGaAs absorption layer have simulated Photons with the wavelength λ = 154 μm lead to hole accumulation close to the double barrier inducing a voltage shift of the current–voltage curve which strongly depends on the bias voltage It was found that the peak current shifting to high voltage as the temperature decreased In addition the capacity–voltage C–V characteristic was simulated under different work temperatures and results showed the higher capacitance gotten at low bias about 03 V and room temperature

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