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Title of Journal: Bull Mater Sci

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Abbravation: Bulletin of Materials Science

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Indian Academy of Sciences

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DOI

10.1002/jps.2600750129

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0973-7669

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Structural and frequency dependencies of ac and

Authors: A ASHERY A H ZAKI M HUSSIEN MOURAD A M AZAB A A M FARAG
Publish Date: 2016/07/13
Volume: 39, Issue: 4, Pages: 1057-1063
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Abstract

In this work heterojunction of InSb/InP was grown by liquid phase epitaxy LPE Surface morphology and crystalline structure of the heterojunction were characterized by scanning electron microscopy SEM and Xray diffraction XRD The frequency and temperature dependences of ac conductivity and dielectric properties of the heterojunctions were investigated in the ranges of 100 kHz–5 MHz and 298–628 K respectively The ac conductivity and its frequency exponents were interpreted in terms of correlated barrier hopping model CBH as the dominant conduction mechanism for charge carrier transport The calculated activation energy from the Arrhenius plot was found to decrease with increasing frequency Experimental results of both dielectric constant ε 1 and dielectric loss ε 2 showed a remarkable dependence of both frequency and temperatureThis work was carried out through the collaboration among Solid State Physics Department National Research Center Egypt Department of Engineering Applications of Laser National Institute of Laser Enhanced Sciences Cairo University Egypt Electronics Department Military Technical College Egypt and Department of Physics Faculty of Education Ain Shams University Egypt

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