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Title of Journal: Bull Mater Sci

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Abbravation: Bulletin of Materials Science

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Indian Academy of Sciences

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DOI

10.1002/0471723924.ch13

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0973-7669

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The enhanced interface effect induced by thermal p

Authors: SHUNSHENG CHEN DAWEI SHI SHAOZHEN LI CHANGPING YANG YALI ZHANG
Publish Date: 2016/02/10
Volume: 39, Issue: 1, Pages: 91-96
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Abstract

Polycrystalline ceramics Nd07Sr03MnO y prepared by solidstate reaction were treated under high pressure of 9 GPa and temperature of 1000 K The electrical transport behaviour of samples were investigated by a variable temperature system and a peculiar transport character was found at low temperature of 120 K the I–V showed an obvious stepshape behaviour with the increase in the measurement voltages at much lower temperature of 123 K the I–V curves exhibited a notable symmetric hysteresis at a critical voltage of 45 V although a linear I–V behaviour at 293 K On the other hand the R–T measurement revealed that the resistivity peak resistivity at T M I disappeared gradually and is replaced by a resistivity platform with the increase in the load currents surprisingly the resistivity platform broadened with continuous increase in the load currents but weakened when an external magnetic field was applied All of these phenomena were not observed for the untreated sample The particle attenuated and the enhanced interface effect which resulted from the violent thermalpressure treatment was responsible for the unique electromagnetic transportWe thank the Project of the Educational Commission of Hubei Province No B2014025 the Natural Science Foundation of Hubei Province No B2014068 the Natural Science Foundation of China No 51302074 and Hubei Polytechnic University No 12xjz01R for their financial supports


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