Authors: D Barat J Angellier A Vicet Y Rouillard L Le Gratiet S Guilet A Martinez A Ramdane
Publish Date: 2007/12/11
Volume: 90, Issue: 2, Pages: 201-204
Abstract
We report on Fabry–Pérot semiconductor lasers and single frequency distributed feedback lasers based on GaInAsSb/AlGaAsSb quantum wells The laser structures were grown by molecular beam epitaxy on GaSb substrates The devices were etched either by wet process or by inductively coupled plasma ICP process Electronbeam lithography was used to deposit a metal Bragg grating on each side of the laser ridge to fabricate the DFB lasers The devices all operate in the continuous wave regime at room temperature with a single frequency emission above 26 μm and good tuning properties making them well adapted to tunable diode laser absorption spectroscopy
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