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Title of Journal: Appl Phys B

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Abbravation: Applied Physics B

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Springer Berlin Heidelberg

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DOI

10.1007/bf00506505

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ISSN

1432-0649

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BaCaFSubscript2/Subscript/III–V semiconductor

Authors: Anna Koeninger Gerhard Boehm Ralf Meyer MarkusChristian Amann
Publish Date: 2014/09/27
Volume: 117, Issue: 4, Pages: 1091-1097
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Abstract

Semiconductor devices such as verticalcavity surfaceemitting lasers VCSELs or semiconductorsaturable absorber mirrors SESAMs require highreflection mirrors Moreover in VCSELs it is beneficial to have a crystalline mirror which is as thin as possible in order to ensure a high thermal conductivity for efficient heatsinking of the laser On the other hand the wavelength tuning range of a SESAM is limited by the reflection bandwidth of its distributed Bragg reflector DBR Thus broadband mirrors are preferable here This paper reports a threepair DBR grown by molecular beam epitaxy MBE using BaCaF2 and GaAs on a GaAs 100 substrate Due to the high ratio in refractive indices of GaAs and the groupIIafluorides highreflectivity mirrors and wide bandwidths can be obtained with low total thicknesses We also investigated growth and stability of the material BaCaF2 as well as its thermal conductivity both as single layer and Bragg reflector Observed peeling of the layers could be avoided by implementing a fluorine treatment previous to the BaCaF2 growth

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