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Title of Journal: Appl Phys B

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Abbravation: Applied Physics B

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Springer-Verlag

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DOI

10.1007/bfb0055081

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1432-0649

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Efficient generation of 1096 nm and 1572 nm by sim

Authors: H T Huang J L He S D Liu J F Yang B T Zhang F Q Liu
Publish Date: 2010/12/29
Volume: 103, Issue: 1, Pages: 129-135
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Abstract

The simultaneous stimulated Raman scattering SRS and optical parametric oscillation OPO for the 1064 nm radiation were realized in one KTP crystal for the first time At an incident diode laser power of 86 W the maximum average output powers at 1096 nm and 1572 nm were 11 W and 036 W respectively The conversion efficiency to Stokes with respect to the incident diode power was as high as 128 The corresponding minimum pulse widths at 1096 nm and 1572 nm were 28 and 11 ns respectively

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