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Title of Journal: Appl Phys B

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Abbravation: Applied Physics B

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Springer Berlin Heidelberg

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DOI

10.1002/jez.1402270301

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ISSN

1432-0649

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Modeling of the static and flowinggas ringLD sid

Authors: Binglin Shen Xingqi Xu Chunsheng Xia Bailiang Pan
Publish Date: 2016/07/13
Volume: 122, Issue: 7, Pages: 210-
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Abstract

A new method of pumpcoupling in diodepumped alkali vapor amplifier is reported which uses ringLD to tightly surround the alkali vapor cell for directly coupled sidepumping The kinetic and fluid dynamic modeling numerical approaches of the ringLD sidepumped configuration are proposed and applied to the static and the flowinggas Cs vapor amplifiers Pump intensity and temperature distribution in the cell are simulated Influences of some important factors on laser power are calculated and analyzed Comparisons of different pumped configurations are made demonstrating the highest utilizing efficiency of pump power of the ringLD sidepumped configuration Thus the model is very helpful for designing highpower sidepumped alkali vapor amplifiers

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