Authors: K Ding Y P Zeng X C Wei Z C Li J X Wang H X Lu P P Cong X Y Yi G H Wang J M Li
Publish Date: 2009/07/24
Volume: 97, Issue: 2, Pages: 465-
Abstract
The electroluminescence efficiency at room temperature and low temperature 15 K in a widenarrowwell InGaN/GaN lightemitting diode with a narrow last well 15 nm and a narrow nexttolast barrier 5 nm is investigated to study the efficiency droop phenomenon A reduced droop in the wide wells and a reduced droop at low temperatures reveals that inferior hole transportation ability induced Auger recombination is the root for the droop at high excitation levels
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