MBE and metallorganic chemical vapor deposition MOCVD has enabled the latticemismatched pseudomorphic growth of" />

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Title of Journal: JOM

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Springer-Verlag

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10.1002/vipr.19990110313

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1543-1851

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Defects in Strained Layer Semiconductors

Authors: Krishna Rajan
Publish Date: 2012/10/26
Volume: 39, Issue: 6, Pages: 24-25
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Abstract

The improvement in vacuum deposition technologies such as molecular beam epitaxy MBE and metallorganic chemical vapor deposition MOCVD has enabled the latticemismatched pseudomorphic growth of epitaxial systems These strained layer systems allow for a wide flexibility in tailoring semiconductor heterostructures for certain electronic band gaps To the materials scientist this means a wider choice of materials in this field of “bandgap engineering” As in any engineering application of materials defects play a major role in materials fabrication and device performance This paper considers some of the unique features of defects in strained layer semiconductors—both process and serviceinduced

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